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SUR3020 thru SUR3060
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-247AC A C(TAB) C A C
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 400 600 VRRM V 200 300 400 600 Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC IFSM TVJ=150oC TVJ=45oC I2t TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
SUR3020 SUR3030 SUR3040 SUR3060 Symbol IFRMS IFAVM IFRM
Maximum Ratings 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150
Unit A
A
A2s
TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque
o
C
125 0.8...1.2 6
W Nm g
SUR3020 thru SUR3060
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=37A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35
Unit uA uA mA V V m K/W
IR
VF VTO rT RthJC RthCK RthJA trr IRM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C
o
35 10
50 11
ns A
FEATURES
* International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
SUR3020 thru SUR3060
Ultra Fast Recovery Epitaxial Diodes
F ig. 1 F orward current vers us voltage drop.
F ig. 2 R ecovery charge vers us -diF /dt.
F ig. 3 P eak revers e current vers us -diF /dt.
F ig. 4 Dynamic parameters vers us junction temperature.
F ig. 5 R ecovery time vers us -diF /dt.
F ig. 6 P eak forward voltage vers us diF /dt.
F ig. 7
T rans ient thermal impedance junction to cas e.

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